Incorporation of Europium into GaN Nanowires by Ion Implantation-Reference-Cited by-同舟云学术

Incorporation of Europium into GaN Nanowires by Ion Implantation

Published:2019-04-02 Issue:18 Volume:123 Page:11874-11887
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Faye D. Nd.¹,Biquard X.²,Nogales E.³^ORCID,Felizardo M.¹,Peres M.¹,Redondo-Cubero A.¹,Auzelle T.⁴⁵,Daudin B.⁴,Tizei L. H. G.⁵^ORCID,Kociak M.⁵^ORCID,Ruterana P.⁶,Möller W.⁷,Méndez B.³^ORCID,Alves E.¹,Lorenz K.¹⁸^ORCID

Affiliation:

1. IPFN, Instituto Superior Técnico, Universidade de Lisboa, Campus Tecnológico e Nuclear, Estrada Nacional 10, 2695-066 Bobadela LRS, Portugal

2. Université Grenoble Alpes, CEA, IRIG, MEM, NRS, 38000 Grenoble, France

3. Departamento de Física de Materiales, Universidad Complutense, 28040 Madrid, Spain

4. Université Grenoble Alpes, CEA, IRIG, PHELIQS, 38000 Grenoble, France

5. Laboratoire de Physique des Solides, Université Paris-Sud, CNRS-UMR 8502, Orsay 91405, France

6. Centre de recherche sur les Ions les Matériaux et la Photonique (CIMAP), UMR 6252, CNRS-ENSICAEN, Boulevard Maréchal Juin, 14050 Caen, France

7. Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, D-01328 Dresden, Germany

8. Instituto de Engenharia de Sistemas de Computadores-Microsistemas e Nanotecnologias (INESC-MN), Rua Alves Redol 9, 1000-029 Lisboa, Portugal

Funder

Funda??o para a Ci?ncia e a Tecnologia

Campus France

FP7 Research infrastructures

European Regional Development Fund

Ministerio de Econom?a y Competitividad

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.8b12014

Reference69 articles.

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2. Room-Temperature Red Emission from a p-Type/Europium-Doped/n-Type Gallium Nitride Light-Emitting Diode under Current Injection

3. It's not easy being green: Strategies for all-nitrides, all-colour solid state lighting

4. Rare-earth-doped GaN: growth, properties, and fabrication of electroluminescent devices

5. Visible cathodoluminescence of GaN doped with Dy, Er, and Tm

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