Room-Temperature Red Emission from a p-Type/Europium-Doped/n-Type Gallium Nitride Light-Emitting Diode under Current Injection
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/2/i=7/a=071004/pdf
Reference16 articles.
1. Rare-earth-doped GaN: growth, properties, and fabrication of electroluminescent devices
2. Prospects for rare earth doped GaN lasers on Si
3. Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials
4. Room-Temperature 1.54 µm Light Emission from Er,O-Codoped GaAs/GaInP Light-Emitting Diodes Grown by Low-Pressure Organometallic Vapor Phase Epitaxy
5. Room-temperature electroluminescence properties of Er,O-codoped GaAs injection-type light-emitting diodes grown by organometallic vapor phase epitaxy
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