Stray light reduction in monolithic GaInN-based μLED arrays for high-definition display realization

Abstract

Abstract Monolithic GaInN-based micro μLEDs arrays are expected to be applied to ultra-high-definition displays. In this study, stray light behavior of them fabricated on sapphire substrates was investigated. Results reveal that strong stray light appears considerably outside the μLED drive region, which is a major obstacle to the realization of high-definition displays. We also explored various techniques to effectively reduce the stray light. Use of flat sapphire substrates and removal of GaN material between μLEDs are effective in reducing stray light and are essential for achieving high definition in monolithic GaInN-based μLED array displays.