Synthesis, Structural and Magnetic Properties of Cobalt-Doped GaN Nanowires on Si by Atmospheric Pressure Chemical Vapor Deposition

Author:

Feng Zhe Chuan,Liu Yu-Lun,Yiin Jeffrey,Chen Li-ChyongORCID,Chen Kuei-HsienORCID,Klein Benjamin,Ferguson Ian T.

Abstract

GaN nanowires (NWs) grown on silicon via atmospheric pressure chemical vapor deposition were doped with Cobalt (Co) by ion implantation, with a high dose concentration of 4 × 1016 cm−2, corresponding to an average atomic percentage of ~3.85%, and annealed after the implantation. Co-doped GaN showed optimum structural properties when annealed at 700 °C for 6 min in NH3 ambience. From scanning electron microscopy, X-ray diffraction, high resolution transmission electron microscope, and energy dispersive X-ray spectroscopy measurements and analyses, the single crystalline nature of Co-GaN NWs was identified. Slight expansion in the lattice constant of Co-GaN NWs due to the implantation-induced stress effect was observed, which was recovered by thermal annealing. Co-GaN NWs exhibited ferromagnetism as per the superconducting quantum interference device (SQUID) measurement. Hysteretic curves with Hc (coercivity) of 502.5 Oe at 5 K and 201.3 Oe at 300 K were obtained. Applied with a magnetic field of 100 Oe, the transition point between paramagnetic property and ferromagnetic property was determined at 332 K. Interesting structural and conducive magnetic properties show the potential of Co-doped GaN nanowires for the next optoelectronic, electronic, spintronic, sensing, optical, and related applications.

Funder

National Science Council

Publisher

MDPI AG

Subject

General Materials Science

Reference52 articles.

1. Bi, W., Kuo, H., Ku, P., and Shen, B. (2017). Handbook of GaN Semiconductor Materials and Devices, CRC Press.

2. Feng, Z.C. (2017). Handbook of Solid-State Lighting and LEDs, CRC Press, Taylor & Francis Group.

3. Recent Advances in GaN Nanowires: Surface-Controlled Conduction and Sensing Applications;Pearton;GaN and ZnO-based Materials and Devices,2012

4. Polarized Raman studies of single GaN nanowire and GaN/AlN heteronanowire structures;Lee;Thin Solid Films,2019

5. Optoelectronic properties of single and array of 1-D III-nitride nanostructures: An approach to light-driven device and energy resourcing;Patsha;J. Mater. Nanosci.,2018

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