Mechanisms of Implantation Damage Formation in AlxGa1–xN Compounds-Reference-Cited by-同舟云学术

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Mechanisms of Implantation Damage Formation in AlxGa1–xN Compounds

Published:2016-03-29 Issue:13 Volume:120 Page:7277-7283
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Faye D. Nd.¹,Wendler E.²,Felizardo M.¹,Magalhães S.¹,Alves E.¹,Brunner F.³,Weyers M.³,Lorenz K.¹

Affiliation:

1. IPFN, Instituto Superior Técnico, Universidade de Lisboa, Estrada Nacional 10, 2695-066 Bobadela LRS, Portugal

2. Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena, Germany

3. Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany

Funder

Fundação para a Ciência e a Tecnologia

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.6b00133

Reference45 articles.

1. III-Nitride Semiconductors and their Modern Devices

2. Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors

3. Ion implanted AlGaN-GaN HEMTs with nonalloyed Ohmic contacts

4. Ion implantation for isolation of AlGaN/GaN HEMTs using C or Al

5. Ion implantation into GaN

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1. Microstructural modifications induced by He implantation at elevated temperature in AlN;Journal of the European Ceramic Society;2024-11

2. Modelling the strain build-up in nitrogen implanted tungsten films on silicon substrates;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2023-04

3. Formation of buried 2D Aluminium Gallium Nitride structures with enhanced piezoelectric modulus by xenon ion implantation;Applied Materials Today;2023-02

4. Advanced AlN ceramic materials for energy-efficient communication devices;Advanced Ceramics for Energy Storage, Thermoelectrics and Photonics;2023

5. Ion Implantation into Nonconventional GaN Structures;Physics;2022-05-16

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