Precise Control of Nanoscale Cu Etching via Gas-Phase Oxidation and Chemical Complexation-Reference-Cited by-同舟云学术

Precise Control of Nanoscale Cu Etching via Gas-Phase Oxidation and Chemical Complexation

Published:2021-01-12 Issue:3 Volume:125 Page:1819-1832
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Sheil Ryan¹,Martirez J. Mark P.¹^ORCID,Sang Xia²,Carter Emily A.¹³⁴^ORCID,Chang Jane P.¹²^ORCID

Affiliation:

1. Department of Chemical and Biomolecular Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States

2. Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States

3. Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, New Jersey 08544-5263, United States

4. Office of the Chancellor, University of California, Los Angeles, Los Angeles, California 90095, United States

Funder

University of California, Los Angeles

Lam Research Corporation

National Science Foundation

Center for Design-Enabled Nanofabrication (C-DEN) Program

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.0c08932

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4. Stress Corrosion Cracking of Cu Interconnects during CMP with a Cu/Porous Low-k Structure

5. Application of Volatility Diagrams for Low Temperature, Dry Etching, and Planarization of Copper

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