Enhanced Light Extraction from p-Si Nanowires/n-IGZO Heterojunction LED by Using Oxide–Metal–Oxide Structured Transparent Electrodes
Author:
Affiliation:
1. Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
Funder
LG Display
Korea Evaluation Institute of Industrial Technology
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.7b00674
Reference37 articles.
1. Light-emitting diodes with 31% external quantum efficiency by outcoupling of lateral waveguide modes
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3. Efficiency Improvement of GaN-Based LEDs with ITO Texturing Window Layers Using Natural Lithography
4. Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of thep-GaN surface
5. Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using SiO2/polystyrene microlens arrays
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