Atomistic Insights into Cu Chemical Mechanical Polishing Mechanism in Aqueous Hydrogen Peroxide and Glycine: ReaxFF Reactive Molecular Dynamics Simulations-Reference-Cited by-同舟云学术

Atomistic Insights into Cu Chemical Mechanical Polishing Mechanism in Aqueous Hydrogen Peroxide and Glycine: ReaxFF Reactive Molecular Dynamics Simulations

Published:2019-10-10 Issue:43 Volume:123 Page:26467-26474
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Wen Jialin¹^ORCID,Ma Tianbao¹^ORCID,Zhang Weiwei²^ORCID,van Duin Adri C. T.²³^ORCID,van Duin Diana M.³,Hu Yuanzhong¹,Lu Xinchun¹^ORCID

Affiliation:

1. State Key Laboratory of Tribology, Tsinghua University, Beijing 100084, China

2. Department of Mechanical and Nuclear Engineering, Pennsylvania State University, University Park, State College, Pennsylvania 16802, United States

3. RxFF_Consulting LLC, State College, Pennsylvania 16801, United States

Funder

China Postdoctoral Science Foundation

National Natural Science Foundation of China

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.9b08466

Reference78 articles.

1. Evaluating the Large Electromigration Resistance of Copper Interconnects Employing a Newly Developed Accelerated Life‐Test Method

2. Advanced multilayer metallization schemes with copper as interconnection metal

3. Advanced scientific semiconductor processing based on high-precision controlled low-energy ion bombardment

4. Copper Metallization Manufacturing Issues for Future ICs

5. Copper interconnections and reliability

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