Controllable adjustment of Ta and Cu material removal rate in TSV tantalum-based barrier layer planarization process
Author:
Funder
Collaborative Innovation Center of Hebei Province for Microelectronic Ultra-Precision Machining Materials and Technology
Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s10853-024-10133-5.pdf
Reference38 articles.
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3. Saha R, Bhowmick B, Baishya S (2017) Si and Ge step-FinFETs: work function variability, optimization and electrical parameters. Superlattices Microstruct 107:5–16. https://doi.org/10.1016/j.spmi.2017.04.001
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5. Kim J, Han JW, Meyyappan M (2018) Reduction of variability in junctionless and inversion-mode FinFETs by stringer gate structure. IEEE Trans Electron Devices 65:470–475. https://doi.org/10.1109/ted.2017.2786238
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