Si and Ge step-FinFETs: Work function variability, optimization and electrical parameters

Author:

Saha Rajesh,Bhowmick Brinda,Baishya S.ORCID

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Quality factor and digital inverter performance in gate underlap and overlap DMG FinFETs;Materials Science and Engineering: B;2024-01

2. Multi-Channel Step FinFET With Spacer Engineering;IEEE Access;2024

3. Single event transient of SOI FinFET with total ionizing dose irradiation;Vibroengineering Procedia;2023-10-20

4. Performance analysis of GaN‐FINFET for RFIC application with respect to different FinWidth's;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-02-07

5. RF/Analog Performance Enhancement of TMG SD FinFET;2022 IEEE 19th India Council International Conference (INDICON);2022-11-24

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