Author:
Gutmann Ronald J.,Paul Chow T.,Gill William N.,Kaloyeros Alain E.,Lanford William A.,Murarka Shyam P.
Abstract
ABSTRACTCopper metallization for on-chip multilevel interconnects is receiving increasing attention for future generations of ICs, with advantages of low line resistance, low interconnect delay, high electromigration resistance and, possibly, overall back-end process simplicity. However, copper introduces a set of processing and manufacturing issues which must be addressed in the research and development phases of the technology. This paper summarizes the most likely processing steps for integrating copper metallization into IC technology and presents the manufacturing issues (materials, unit processing and process integration issues) that need to be addressed.
Publisher
Springer Science and Business Media LLC
Cited by
13 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献