Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon-Reference-Cited by-同舟云学术

Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon

Published:2014-03-13 Issue:4 Volume:14 Page:1769-1775
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Qiu Yang¹,Cristiano Fuccio¹,Huet Karim²,Mazzamuto Fulvio²,Fisicaro Giuseppe³,La Magna Antonino³,Quillec Maurice⁴,Cherkashin Nikolay⁵,Wang Huiyuan⁶,Duguay Sébastien⁶,Blavette Didier⁶

Affiliation:

1. LAAS, CNRS and Université de Toulouse, 7 av. Du Col. Roche, 31400 Toulouse, France

2. Excico, 13-21 Quai des Gresillons, 92230 Gennevilliers, France

3. CNR-IMM, VIII Strada, I-95121 Catania, Italy

4. Probion Analysis, 37 rue de Fontenay, 92220 Bagneux, France

5. CEMES, CNRS UPR 8011 and Université de Toulouse, 29 rue Jeanne Marvig, 31055 Toulouse, France

6. Normandie University, GPM, UMR 6634 CNRS, 76801 Saint Etienne du Rouvray, France

Funder

European Commission

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl4042438

Reference35 articles.

1. Thin-Wafer Silicon IGBT With Advanced Laser Annealing and Sintering Process

2. Huet, K.; Boniface, C.; Negru, R. Venturini, J.In Ion Implantation Technology 2012:Proceedings of the 19th International Conference on Ion Implantation Technology (IIT), AIP Conf. Proc. 1496, 2012; pp135–138.

3. Venturini, J.In Junction Technology (IWJT) 2012:Proceedings of the 12th International Workshop on Junction Technology, Shanghai, China, May 14–15, 2012; pp57–62.

4. Transient enhanced diffusion of boron in Si

5. Extended defects in shallow implants

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