Abstract
AbstractWe report on the structural properties of highly B-doped silicon (up to 10 at.% of active doping) realised by nanosecond laser doping. The crystalline quality, lattice deformation and B distribution profile of the doped layer are investigated by scanning transmission electron microscopy followed by high-angle annular dark field contrast studies and geometrical phase analysis, and compared to the results of secondary ions mass spectrometry and Hall measurements. When increasing the active B concentration above 4 at.%, the fully strained, perfectly crystalline, Si:B layer starts showing dislocations and stacking faults. These only disappear around 8 at.% when the Si:B layer is well accommodated to the substrate. With increasing B incorporation, an increasing number of small precipitates is observed, together with filaments with a higher active B concentration and stacking faults. At the highest concentrations studied, large precipitates form, related to the decrease of active B concentration. The structural information, defect type and concentration, and active B distribution are connected to the initial increase and subsequent gradual loss of superconductivity.
Funder
French National Research Agency
Labex
CNRS RENATECH
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
2 articles.
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