Contact Electrification Field-Effect Transistor
Author:
Affiliation:
1. Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China,
2. School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, United States
Funder
Beijing Municipal Science & Technology Commission
"Thousands talents” program for pioneer researcher and his innovation team, China
Publisher
American Chemical Society (ACS)
Subject
General Physics and Astronomy,General Engineering,General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/nn5039806
Reference32 articles.
1. Large-scale complementary integrated circuits based on organic transistors
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5. Vertically integrated, three-dimensional nanowire complementary metal-oxide-semiconductor circuits
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