Tungsten-Doped Indium Tin Oxide Thin-Film Transistors for Dual-mode Proximity Sensing Application-Reference-Cited by-同舟云学术

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Tungsten-Doped Indium Tin Oxide Thin-Film Transistors for Dual-mode Proximity Sensing Application

Published:2023-11-07 Issue: Volume: Page:
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Zeng Wanyu¹^ORCID,Peng Zengchong¹,Lin Dong²,Guliakova Anna A.³,Zhang Qun¹,Zhu Guodong¹^ORCID

Affiliation:

1. Department of Materials Science, National Engineering Laboratory for TFT-LCD Materials and Technologies, Fudan University, Shanghai 200433, China

2. School of Ocean Information Engineering, Jimei University, Xiamen 361021, China

3. Department of General and Experimental Physics, Herzen University, St. Petersburg 191186, Russia

Funder

Science and Technology Commission of Shanghai Municipality

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c11393

Reference51 articles.

1. Transduction Mechanisms, Micro-Structuring Techniques, and Applications of Electronic Skin Pressure Sensors: A Review of Recent Advances

2. Skin-inspired highly stretchable and conformable matrix networks for multifunctional sensing

3. Flexible, anti-damage, and non-contact sensing electronic skin implanted with MWCNT to block public pathogens contact infection

4. Development of Material-Integrated Actuator-Sensor-Arrays for Obstacle Sensing

5. Ultrathin, transparent, and robust self-healing electronic skins for tactile and non-contact sensing

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Solution‐Processed Metal Oxide Thin‐Film Transistor at Low Temperature via A Combination Strategy of H₂O₂‐Inducement Technique and Infrared Irradiation Annealing;Small Methods;2024-03-04

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