MAX-Phase Films Overcome Scaling Limitations to the Resistivity of Metal Thin Films-Reference-Cited by-同舟云学术

MAX-Phase Films Overcome Scaling Limitations to the Resistivity of Metal Thin Films

Published:2021-12-15 Issue:51 Volume:13 Page:61809-61817
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Yoo Joung Eun¹,Sung Ju Young²,Hwang Jin Ha²,Maeng Inhee³,Oh Seung-Jae³,Lee Inho⁴,Shim Ji Hoon⁴⁵^ORCID,Kim Sung Dug¹,Yoon Du-Seop¹,Jang Seo Young²,Kang Young Jae¹^ORCID,Lee Sang Woon²^ORCID

Affiliation:

1. Material Research Center, SAIT, Samsung Electronics, Suwon 16678, Republic of Korea

2. Department of Energy Systems Research and Department of Physics, Ajou University, Suwon 16499, Republic of Korea

3. YUHS-KRIBB Medical Convergence Research Institute, Yonsei University, Seoul 03722, Republic of Korea

4. Department of Chemistry, Pohang University of Science and Technology, Pohang 37673, Republic of Korea

5. Department of Physics, Pohang University of Science and Technology, Pohang 37673, Republic of Korea

Funder

National Research Foundation of Korea

Korea Institute of Energy Technology Evaluation and Planning

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.1c20516

Reference40 articles.

1. Damascene copper electroplating for chip interconnections

2. Atomic Layer Deposition (ALD) of Metal Gates for CMOS

3. Capacitors with an Equivalent Oxide Thickness of <0.5 nm for Nanoscale Electronic Semiconductor Memory

4. Physical, Electrical, and Reliability Considerations for Copper BEOL Layout Design Rules

5. Atomic Layer Epitaxy Growth of TiN Thin Films

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