Unprecedentedly Uniform, Reliable, and Centimeter-Scale Molybdenum Disulfide Negative Differential Resistance Photodetectors-Reference-Cited by-同舟云学术

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Unprecedentedly Uniform, Reliable, and Centimeter-Scale Molybdenum Disulfide Negative Differential Resistance Photodetectors

Published:2021-05-20 Issue:21 Volume:13 Page:25072-25081
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Woo Gunhoo¹,Lee Eun Kwang²,Yoo Hocheon³^ORCID,Kim Taesung¹⁴^ORCID

Affiliation:

1. SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do 16419, Republic of Korea

2. Weldon School of Biomedical Engineering, Purdue University, West Lafayette, Indiana 47907, United States

3. Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam 13120, Republic of Korea

4. School of Mechanical Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 16419, Republic of Korea

Funder

National Research Foundation

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.1c02880

Reference43 articles.

1. Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic

2. Interlayer Band‐to‐Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field‐Effect Transistors

3. Voltage-Sensitivity of Motoneuron NMDA Receptor Channels Is Modulated by Serotonin in the Neonatal Rat Spinal Cord

4. Negative differential resistance and multilevel memory effects in organic devices

5. A scalable neuristor built with Mott memristors

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1. In Situ Bipolar Doping via Mechanically Controlled Dipole Under Water;Advanced Materials Interfaces;2024-05-02

2. Nanoristors: highly uniform, sub-500-millivolt, large-scale, and robust molybdenum disulfide nanograined memristors;Journal of Materials Chemistry C;2024

3. Temperature‐Dependent Phase Transition in WS₂ for Reinforcing Band‐to‐Band Tunneling and Photoreactive Random Access Memory Application;Small Science;2023-11-21

4. Selective‐Area Growth of Aligned Organic Semiconductor Nanowires and Their Device Integration;Advanced Functional Materials;2023-11-03

5. High-Responsivity and Broadband MoS₂ Photodetector Using Interfacial Engineering;ACS Applied Materials & Interfaces;2023-09-20

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