Interlayer Band‐to‐Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field‐Effect Transistors-Reference-Cited by-同舟云学术

Interlayer Band‐to‐Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field‐Effect Transistors

Author:

Lv Quanshan¹²,Yan Faguang¹²,Mori Nobuya³,Zhu Wenkai¹²,Hu Ce¹²,Kudrynskyi Zakhar R.⁴,Kovalyuk Zakhar D.⁵,Patanè Amalia⁴,Wang Kaiyou¹²⁶^ORCID

Affiliation:

1. State Key Laboratory of Superlattices and MicrostructuresInstitute of SemiconductorsChinese Academy of Sciences Beijing 100083 China

2. College of Materials Science and Opto‐Electronic TechnologyUniversity of Chinese Academy of Science Beijing 100049 China

3. Division of Electrical, Electronic and Information Engineering Graduate School of EngineeringOsaka University Osaka 565‐0871 Japan

4. School of Physics and AstronomyUniversity of Nottingham Nottingham NG7 2RD UK

5. Institute for Problems of Materials ScienceThe National Academy of Sciences of UkraineChernivtsi Branch Chernivtsi 58001 Ukraine

6. Beijing Academy of Quantum Information Sciences Beijing 100193 China

Funder

National Natural Science Foundation of China

Chinese Academy of Sciences

Engineering and Physical Sciences Research Council

University of Nottingham

National Academy of Sciences of Ukraine

Leverhulme Trust

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

Reference42 articles.

Cited by 74 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献