Nanoristors: highly uniform, sub-500-millivolt, large-scale, and robust molybdenum disulfide nanograined memristors-Reference-Cited by-同舟云学术

Nanoristors: highly uniform, sub-500-millivolt, large-scale, and robust molybdenum disulfide nanograined memristors

Published:2024 Issue:17 Volume:12 Page:6350-6358
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Woo Gunhoo¹,Kim Hyeong-U²³,Jang Byung Chul⁴,Naqi Muhammad⁵,Hong Seongin⁶^ORCID,Bala Arindam⁵,Kang Seunghun⁵,Kim Yunseok⁵^ORCID,Kim Sunkook⁵,Kim Taesung¹⁷^ORCID,Kim Jae-Joon⁸⁹,Yoo Hocheon¹⁰^ORCID

Affiliation:

1. SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University (SKKU), Suwon, Republic of Korea

2. Semiconductor Manufacturing Research Center, Korea Institute of Machinery and Materials (KIMM), Daejeon, Republic of Korea

3. Nano-mechatronics, University of Science & Technology (UST), Daejeon, Republic of Korea

4. School of Electronics and Electrical Engineering, Kyungpook National University, 41566 80 Daehakro, Bukgu, Daegu, Republic of Korea

5. School of Advanced Material Science and Engineering, Sungkyunkwan University (SKKU), Suwon, Republic of Korea

6. Department of Physics, Gachon University, Seongnam 13120, Republic of Korea

7. School of Mechanical Engineering, Sungkyunkwan University (SKKU), Suwon, Republic of Korea

8. Department of Electrical and Computer Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, Republic of Korea

9. Inter-university Semiconductor Research Center at Seoul National University, Seoul, Republic of Korea

10. Department of Electronic Engineering, Gachon University, Seongnam, Republic of Korea

Abstract

Highly robust and uniform quality memristor devices are proposed using PECVD-grown nanograin MoS2 layers.

Funder

Ministry of Trade, Industry and Energy

Ministry of Education

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D3TC04265K

Reference49 articles.

1. High‐Performance Memristor Based on 2D Layered BiOI Nanosheet for Low‐Power Artificial Optoelectronic Synapses

2. Wafer‐Scale 2D Hafnium Diselenide Based Memristor Crossbar Array for Energy‐Efficient Neural Network Hardware

3. Flexible Memristor Constructed by 2D Cadmium Phosphorus Trichalcogenide for Artificial Synapse and Logic Operation

4. Self-Assembled TaO_X/2H-TaS₂ as a van der Waals Platform of a Multilevel Memristor Circuit Integrated with a β-Ga₂O₃ Transistor