Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic-Reference-Cited by-同舟云学术

Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic

Published:2016-11-07 Issue:1 Volume:7 Page:
ISSN:2041-1723
Container-title:Nature Communications
language:en
Short-container-title:Nat Commun

Author:

Shim Jaewoo,Oh Seyong,Kang Dong-Ho,Jo Seo-Hyeon,Ali Muhammad Hasnain,Choi Woo-Young,Heo Keun,Jeon Jaeho,Lee Sungjoo,Kim Minwoo,Song Young Jae^ORCID,Park Jin-Hong

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry

Link

http://www.nature.com/articles/ncomms13413.pdf

Reference47 articles.

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2. Ganjipour, B. et al. High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires. Nano Lett. 11, 4222–4226 (2011).

3. Desplanque, L. et al. Influence of nanoscale faceting on the tunneling properties of near broken gap InAs/AlGaSb heterojunctions grown by selective area epitaxy. Nanotechnology 25, 465302 (2014).

4. Li, Q., Han, Y., Lu, X. & Lau, K. M. GaAs-InGaAs-GaAs fin-array tunnel diodes on (001) Si substrates with room-temperature peak-to-valley current ratio of 5.4. IEEE Electron Dev. Lett. 37, 24–27 (2016).

5. Yan, R. et al. Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignment. Nano Lett. 15, 5791–5798 (2015).

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