Influence of nanoscale faceting on the tunneling properties of near broken gap InAs/AlGaSb heterojunctions grown by selective area epitaxy-Reference-Cited by-同舟云学术

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Influence of nanoscale faceting on the tunneling properties of near broken gap InAs/AlGaSb heterojunctions grown by selective area epitaxy

Published:2014-10-30 Issue:46 Volume:25 Page:465302
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Desplanque L,Fahed M,Han X,Chinni V K,Troadec D,Chauvat M-P,Ruterana P,Wallart X

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/25/i=46/a=465302/pdf

Reference19 articles.

1. GaSbAlSbInAs multi-heterojunctions

2. Sb-heterostructure interband backward diodes

3. Resonant tunneling in AlSb/InAs/AlSb double‐barrier heterostructures

4. Modeling of High-Performance p-Type III–V Heterojunction Tunnel FETs

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1. Collective formation of misfit dislocations at the critical thickness for equilibrium nanowire heterostructures;Journal of Crystal Growth;2023-11

2. Effect of in-plane alignment on selective area grown homo-epitaxial nanowires;Nanotechnology;2023-04-21

3. Improving the intrinsic conductance of selective area grown in-plane InAs nanowires with a GaSb shell;Nanotechnology;2023-04-12

4. T-Phase and H-Phase Coupled TMD van der Waals Heterostructure ZrS₂/MoTe₂ with Both Rashba Spin Splitting and Type-III Band Alignment;The Journal of Physical Chemistry C;2022-06-21

5. In-plane InGaAs/Ga(As)Sb nanowire based tunnel junctions grown by selective area molecular beam epitaxy;Nanotechnology;2022-01-12

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