High-Performance Oxide-Based p–n Heterojunctions Integrating p-SnOx and n-InGaZnO-Reference-Cited by-同舟云学术

High-Performance Oxide-Based p–n Heterojunctions Integrating p-SnOx and n-InGaZnO

Published:2021-11-15 Issue:46 Volume:13 Page:55676-55686
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Lee Dong Hun¹,Park Honghwi²^ORCID,Clevenger Michael¹,Kim Hyeonghun¹,Kim Chung Soo³,Liu Mingyuan¹,Kim Giyong⁴,Song Han Wook⁵,No Kwangsoo⁶,Kim Sung Yeol⁴,Ko Dong-Kyun⁷^ORCID,Lucietto Anne¹,Park Hongsik²^ORCID,Lee Sunghwan¹^ORCID

Affiliation:

1. School of Engineering Technology, Purdue University, West Lafayette, Indiana 47907, United States

2. School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea

3. Analysis Technical Center, Korea Institute of Ceramic Engineering and Technology, Jinju, Gyeongsangnam-do 52851, Republic of Korea

4. School of Mechanical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea

5. Center for Mass and Related Quantities, Korea Research Institute of Standard and Science, Daejeon 34113, Republic of Korea

6. Department of Materials Science and Engineering, KAIST, Daejeon 34141, Republic of Korea

7. Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102, United States

Funder

National Research Foundation of Korea

Korea Research Institute of Standards and Science

Division of Electrical, Communications and Cyber Systems

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.1c16222

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