Highly Conductive Tungsten-Doped Tin(IV) Oxide Transparent Electrodes Delivered by Lattice-Strain Control-Reference-Cited by-同舟云学术

Highly Conductive Tungsten-Doped Tin(IV) Oxide Transparent Electrodes Delivered by Lattice-Strain Control

Published:2023-05-15 Issue:11 Volume:6 Page:5835-5841
ISSN:2574-0962
Container-title:ACS Applied Energy Materials
language:en
Short-container-title:ACS Appl. Energy Mater.

Author:

Sathasivam Sanjayan¹²^ORCID,Ponja Sapna D.²,Park Seonghyeok¹,Sanchez-Perez Clara²³,Blackman Christopher²^ORCID,Parkin Ivan P.²^ORCID,Carmalt Claire J.²^ORCID

Affiliation:

1. School of Engineering, London South Bank University, London SE1 0AA, U.K.

2. Materials Chemistry Centre, Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, U.K.

3. Instituo de Energía Solar, Universidad Politécnica de Madrid, 28040 Madrid, Spain

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Materials Chemistry,Electrochemistry,Energy Engineering and Power Technology,Chemical Engineering (miscellaneous)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaem.3c00248

Reference48 articles.

1. Transparent Conducting Oxides

2. n-Type doped transparent conducting binary oxides: an overview

3. Wide Bandgap Oxide Semiconductors: from Materials Physics to Optoelectronic Devices

4. Vapor Deposition of Transparent, p-Type Cuprous Iodide Via a Two-Step Conversion Process

5. Low-Temperature Oxide/Metal/Oxide Multilayer Films as Highly Transparent Conductive Electrodes for Optoelectronic Devices

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