n-Type doped transparent conducting binary oxides: an overview-Reference-Cited by-同舟云学术

n-Type doped transparent conducting binary oxides: an overview

Published:2016 Issue:29 Volume:4 Page:6946-6961
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Dixon Sebastian C.¹²³⁴⁵,Scanlon David O.⁶²³⁴⁵,Carmalt Claire J.¹²³⁴⁵,Parkin Ivan P.¹²³⁴⁵

Affiliation:

1. Materials Chemistry Research Centre

2. Department of Chemistry

3. University College London

4. London WC1H 0AJ

5. UK

6. Kathleen Lonsdale Materials Chemistry

Abstract

A review covering recent developments in computational and experimental study in the n-type doping of binary oxide semiconductors for transparent conducting applications.

Funder

Engineering and Physical Sciences Research Council

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/TC/C6TC01881E

Reference116 articles.

1. Light-induced conversion of an insulating refractory oxide into a persistent electronic conductor

2. Band gap and work function tailoring of SnO2 for improved transparent conducting ability in photovoltaics

3. Anomalous Optical Absorption Limit in InSb

4. On the possibility of p-type SnO2

5. Limits to Doping of Wide Band Gap Semiconductors

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