Atomic Layer Deposition and Chemical Vapor Deposition of Tantalum Oxide by Successive and Simultaneous Pulsing of Tantalum Ethoxide and Tantalum Chloride-Reference-Cited by-同舟云学术

Atomic Layer Deposition and Chemical Vapor Deposition of Tantalum Oxide by Successive and Simultaneous Pulsing of Tantalum Ethoxide and Tantalum Chloride

Published:2000-06-23 Issue:7 Volume:12 Page:1914-1920
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Kukli Kaupo¹,Ritala Mikko¹,Leskelä Markku¹

Affiliation:

1. University of Helsinki, Department of Chemistry, P.O. Box 55, FIN-00014, University of Helsinki, Finland, and University of Tartu, Institute of Experimental Physics and Technology, Tähe 4, EE-51010 Tartu, Estonia

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm001017j

Reference31 articles.

1. A study on the capacitance–voltage characteristics of metal-Ta2O5-silicon capacitors for very large scale integration metal-oxide-semiconductor gate oxide applications

2. Tantalum pentoxide (Ta2O5) thin films for advanced dielectric applications

3. Insulating properties of tantalum pentoxide capacitor films obtained by annealing in dry ozone

4. Selective Hemispherical Grained Polysilicon Transformation for 256 MB, 1 GB Dynamic Random Access Memory and Beyond

5. Fabrication and characterization of Si-MOSFET's with PECVD amorphous Ta2O5 gate insulator

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