Effects of high-k gate dielectrics on the electrical performance and reliability of an amorphous indium–tin–zinc–oxide thin film transistor (a-ITZO TFT): an analytical survey-Reference-Cited by-同舟云学术

Effects of high-k gate dielectrics on the electrical performance and reliability of an amorphous indium–tin–zinc–oxide thin film transistor (a-ITZO TFT): an analytical survey

Published:2019 Issue:48 Volume:11 Page:23459-23474
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Taouririt Taki Eddine¹²³⁴⁵^ORCID,Meftah Afak¹²³⁴⁵,Sengouga Nouredine¹²³⁴⁵,Adaika Marwa¹²³⁴⁵,Chala Slimane¹²³⁴⁵,Meftah Amjad¹²³⁴⁵

Affiliation:

1. Laboratory of Metallic and Semi-conducting Materials

2. B.P. 145

3. University of Biskra

4. Biskra

5. Algeria

Abstract

This study is a numerical simulation obtained by using Silvaco Atlas software to investigate the effect of different types of dielectric layers, inserted between the channel and the gate, on the performance and reliability of an a-ITZO TFT.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2019/NR/C9NR03395E

Reference41 articles.

1. Fabrication of transparent conducting amorphous Zn–Sn–In–O thin films by direct current magnetron sputtering

2. Transparent Conducting Oxides in the ZnO-In2O3-SnO2 System

3. Optical and Carrier Transport Properties of Cosputtered Zn–In–Sn–O Films and Their Applications to TFTs

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