Cd0.2Zn0.8O nanowire thin film transistor for low kickback high-speed AMLCD circuit applications-Reference-Cited by-同舟云学术

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Cd0.2Zn0.8O nanowire thin film transistor for low kickback high-speed AMLCD circuit applications

Published:2024-05 Issue: Volume:189 Page:207796
ISSN:2773-0123
Container-title:Micro and Nanostructures
language:en
Short-container-title:Micro and Nanostructures

Author:

Binod Kumar Binay,Dubey Sarvesh,Jit Satyabrata,Singh Kunal^ORCID

Publisher

Elsevier BV

Reference40 articles.

1. Highly reliable a-Si:H TFT Gate driver with precharging structure for in-cell touch AMLCD applications;Lin;IEEE Trans. Electron. Dev.,2019

2. Threshold voltage tuning in a-IGZO TFTs with ultrathin SnOx capping layer and application to depletion-load inverter;Wang;IEEE Electron. Device Lett.,2016

3. P-14: new pixel structure with kickback voltage free AMLCD;Soh;SID Symp. Dig. Tech. Pap.,2006

4. TCAD simulation of dual-gate a-IGZO TFTs with source and drain offsets;Billah;IEEE Electron. Device Lett.,2016

5. Electric-field enhancement of a gate-all-around nanowire thin-film transistor memory;Huang;IEEE Electron. Device Lett.,2010

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