Insulating properties of tantalum pentoxide capacitor films obtained by annealing in dry ozone
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.369339
Reference11 articles.
1. Highly reliable, high-C DRAM storage capacitors with CVD TA/sub 2/O/sub 5/ films on rugged polysilicon
2. Ultra-thin Ta2O5dielectric film for high-speed bipolar memories
3. Selected Properties of Pyrolytic Ta[sub 2]O[sub 5] Films
4. Effect of ozone annealing on the dielectric properties of tantalum oxide thin films grown by chemical vapor deposition
5. UV-O/sub 3/ and dry-O/sub 2/: Two-step-annealed chemical vapor-deposited Ta/sub 2/O/sub 5/ films for storage dielectrics of 64-Mb DRAMs
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