Effects of Ga:N Addition on the Electrical Performance of Zinc Tin Oxide Thin Film Transistor by Solution-Processing
Author:
Affiliation:
1. School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Korea
2. Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seoul, 133-719, Republic of Korea
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/am5013672
Reference32 articles.
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