Highly Selective Dry Etching of Germanium over Germanium–Tin (Ge1–xSnx): A Novel Route for Ge1–xSnx Nanostructure Fabrication
Author:
Affiliation:
1. Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States
2. Applied Materials Inc., Sunnyvale, California 94085, United States
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/nl4017286
Reference36 articles.
1. Interband Transitions inSnxGe1−xAlloys
2. TIN-BASED GROUP IV SEMICONDUCTORS: New Platforms for Opto- and Microelectronics on Silicon
3. Silicon-based optoelectronics
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