Step Flow Versus Mosaic Film Growth in Hexagonal Boron Nitride-Reference-Cited by-同舟云学术

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Step Flow Versus Mosaic Film Growth in Hexagonal Boron Nitride

Published:2013-01-31 Issue:6 Volume:135 Page:2368-2373
ISSN:0002-7863
Container-title:Journal of the American Chemical Society
language:en
Short-container-title:J. Am. Chem. Soc.

Author:

Lu Jiong¹²,Yeo Pei Shan Emmeline¹³,Zheng Yi¹,Xu Hai¹²,Gan Chee Kwan³,Sullivan Michael B.³,Castro Neto A.H.²⁴,Loh Kian Ping¹²

Affiliation:

1. Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543

2. Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore 117546

3. Institute of High Performance Computing, 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632

4. Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542

Publisher

American Chemical Society (ACS)

Subject

Colloid and Surface Chemistry,Biochemistry,General Chemistry,Catalysis

Link

https://pubs.acs.org/doi/pdf/10.1021/ja3117735

Reference39 articles.

1. Boron nitride substrates for high-quality graphene electronics

2. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

3. Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers

4. Direct Growth of Graphene/Hexagonal Boron Nitride Stacked Layers

5. Synthesis of Few-Layer Hexagonal Boron Nitride Thin Film by Chemical Vapor Deposition

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3. Bevel-edge epitaxy of ferroelectric rhombohedral boron nitride single crystal;Nature;2024-05-01

4. Metal dimers anchored on boron nitride monolayers with boron divacancy as an effective nitrogen fixation electrocatalyst: A computational study;International Journal of Hydrogen Energy;2024-02

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