Bevel-edge epitaxy of ferroelectric rhombohedral boron nitride single crystal-Reference-Cited by-同舟云学术

Bevel-edge epitaxy of ferroelectric rhombohedral boron nitride single crystal

Published:2024-05-01 Issue:8010 Volume:629 Page:74-79
ISSN:0028-0836
Container-title:Nature
language:en
Short-container-title:Nature

Author:

Wang Li,Qi Jiajie,Wei Wenya,Wu Mengqi,Zhang Zhibin^ORCID,Li Xiaomin,Sun Huacong,Guo Quanlin,Cao Meng,Wang Qinghe^ORCID,Zhao Chao,Sheng Yuxuan,Liu Zhetong,Liu Can^ORCID,Wu Muhong^ORCID,Xu Zhi,Wang Wenlong,Hong Hao,Gao Peng,Wu Menghao,Wang Zhu-Jun^ORCID,Xu Xiaozhi^ORCID,Wang Enge^ORCID,Ding Feng^ORCID,Zheng Xiaorui,Liu Kaihui^ORCID,Bai Xuedong^ORCID

Publisher

Springer Science and Business Media LLC

Link

https://www.nature.com/articles/s41586-024-07286-3.pdf

Reference60 articles.

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3. Cassabois, G., Valvin, P. & Gil, B. Hexagonal boron nitride is an indirect bandgap semiconductor. Nat. Photon. 10, 262–266 (2016).

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5. Li, Y. L. et al. Probing symmetry properties of few-layer MoS2 and h-BN by optical second-harmonic generation. Nano Lett. 13, 3329–3333 (2013).

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