Direct Growth of Graphene/Hexagonal Boron Nitride Stacked Layers-Reference-Cited by-同舟云学术

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Direct Growth of Graphene/Hexagonal Boron Nitride Stacked Layers

Published:2011-05-11 Issue:5 Volume:11 Page:2032-2037
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Liu Zheng,Song Li,Zhao Shizhen,Huang Jiaqi,Ma Lulu,Zhang Jiangnan,Lou Jun,Ajayan Pulickel M.

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl200464j

Reference35 articles.

1. The rise of graphene

2. Intrinsic and extrinsic performance limits of graphene devices on SiO2

3. Electron transport and full-band electron-phonon interactions in graphene

4. Screening Effect and Impurity Scattering in Monolayer Graphene

5. Quantum Transport of Massless Dirac Fermions

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