Effects of Solution Temperature on Solution-Processed High-Performance Metal Oxide Thin-Film Transistors-Reference-Cited by-同舟云学术

Effects of Solution Temperature on Solution-Processed High-Performance Metal Oxide Thin-Film Transistors

Published:2013-03-19 Issue:7 Volume:5 Page:2585-2592
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Lee Keun Ho¹,Park Jee Ho¹,Yoo Young Bum¹,Jang Woo Soon¹,Oh Jin Young¹,Chae Soo Sang¹,Moon Kyeong Ju²,Myoung Jae Min²,Baik Hong Koo¹

Affiliation:

1. Display and Plasma Research Lab, Department of Materials Science and Engineering, Yonsei University, 134 Shinchong-dong, Seoul 120-750, Republic of Korea

2. Information and Electronic Materials Research Lab, Department of Materials Science and Engineering, Yonsei University, 134 Shinchong-dong, Seoul 120-750, Republic of Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am3032629

Reference34 articles.

1. A General Route to Printable High-Mobility Transparent Amorphous Oxide Semiconductors

2. Low-Temperature, Aqueous-Solution-Processed Zinc Tin Oxide Thin Film Transistor

3. Structural and Electrical Properties of Solution-Processed Gallium-Doped Indium Oxide Thin-Film Transistors

4. Role of Gallium Doping in Dramatically Lowering Amorphous-Oxide Processing Temperatures for Solution-Derived Indium Zinc Oxide Thin-Film Transistors

5. Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process

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