Structural and Electrical Properties of Solution-Processed Gallium-Doped Indium Oxide Thin-Film Transistors-Reference-Cited by-同舟云学术

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Structural and Electrical Properties of Solution-Processed Gallium-Doped Indium Oxide Thin-Film Transistors

Published:2011-08-05 Issue:8 Volume:50 Page:080202
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Park Jee Ho,Choi Won Jin,Chae Soo Sang,Oh Jin Young,Lee Se Jong,Song Kie Moon,Baik Hong Koo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference14 articles.

1. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

2. Indium zinc oxide thin films deposited by sputtering at room temperature

3. High performance ZnO-thin-film transistor with Ta2O5 dielectrics fabricated at room temperature

4. Thin-film transistors with amorphous indium gallium oxide channel layers

5. Indium oxide thin-film transistor by reactive ion beam assisted deposition

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of high quality polycrystalline InGaO thin films by spray pyrolysis for coplanar thin-film transistors on polyimide substrate;Journal of Alloys and Compounds;2024-10

2. Hypoeutectic Liquid Metal Printing of 2D Indium Gallium Oxide Transistors;Small;2024-07-25

3. Highly C‐axis Aligned ALD‐InGaO Channel Improving Mobility and Thermal Stability for Next‐Generation 3D Memory Devices;Advanced Electronic Materials;2024-07-25

4. High Performance Amorphous In_0.5Ga_0.5O Thin‐Film Transistor Embedded with Nanocrystalline In₂O₃ Dots for Flexible Display Application;Advanced Electronic Materials;2023-07-08

5. Ultrathin InGaO Thin Film Transistors by Atomic Layer Deposition;IEEE Electron Device Letters;2023-02

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