InGaN-based vertical light-emitting diodes with acid-modified graphene transparent conductor and highly reflective membrane current blocking layer-Reference-Cited by-同舟云学术

InGaN-based vertical light-emitting diodes with acid-modified graphene transparent conductor and highly reflective membrane current blocking layer

Published:2013-03-08 Issue:2151 Volume:469 Page:20120652
ISSN:1364-5021
Container-title:Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences
language:en
Short-container-title:Proc. R. Soc. A.

Author:

Wang Liancheng¹,Zhang Yiyun¹,Li Xiao²,Liu Zhiqiang¹,Zhang Lian¹,Guo Enqing¹,Yi Xiaoyan¹,Zhu Hongwei²³,Wang Guohong¹

Affiliation:

1. Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People’s Republic of China

2. Department of Mechanical Engineering, Tsinghua University, Beijing 100084, People’s Republic of China

3. Center for Nano and Micro Mechanics, Tsinghua University, Beijing 100084, People’s Republic of China

Abstract

Vertical light-emitting diodes (VLEDs) with a highly reflective membrane (HRM) as current blocking layer (CBL) and a graphene transparent conductive layer (TCL) have been fabricated and characterized. High reflectance of HRM and high transmittance of graphene ensure less loss of the optical power. The VLEDs show improved optical output and less efficiency droop, thanks to the current spreading effect of HRM CBL and graphene TCL by preventing current crowding under the top electrode and thus increasing the internal and external quantum efficiency. With further acid modification, forward electrical characteristics of VLEDs are improved.

Publisher

The Royal Society

Subject

General Physics and Astronomy,General Engineering,General Mathematics

Link

https://royalsocietypublishing.org/doi/pdf/10.1098/rspa.2012.0652

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