Highly efficient vertical laser-liftoff GaN-based light-emitting diodes formed by optimization of the cathode structure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1861497
Reference14 articles.
1. Fabrication and characterization of GaN/InGaN/AlGaN double heterostructure LEDs and their application in luminescence conversion LEDs
2. GaN-Based LEDs and Lasers on SiC
3. InGaN/GaN multiple quantum well light-emitting diodes with highly transparent Pt thin film contact on p-GaN
4. High-transparency Ni/Au bilayer contacts to n-type GaN
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