Degradation and corresponding failure mechanism for GaN-based LEDs-Reference-Cited by-同舟云学术

Degradation and corresponding failure mechanism for GaN-based LEDs

Published:2016-05 Issue:5 Volume:6 Page:055219
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Fu Jiajia¹,Zhao Lixia¹,Cao Haicheng¹,Sun Xuejiao¹,Sun Baojuan¹,Wang Junxi¹,Li Jinmin¹

Affiliation:

1. Semiconductor lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, No.A35, Qinghua East Road, Haidian District, Beijing P R China

Funder

the China International Science and Technology Cooperation Program

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4953056

Reference24 articles.

1. Temperature rise in InGaN/GaN vertical light emitting diode on copper transferred from silicon probed by Raman scattering

2. InGaN-based vertical light-emitting diodes with acid-modified graphene transparent conductor and highly reflective membrane current blocking layer

3. Electrical, optical and thermal degradation of high power GaN/InGaN light-emitting diodes

4. Improved Reliability and ESD Characteristics of Flip-Chip GaN-Based LEDs With Internal Inverse-Parallel Protection Diodes

5. Degradation behavior of GaN-based LEDs encapsulated with different phosphors

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study on the Degradation Performance of AlGaN-Based Deep Ultraviolet LEDs under Thermal and Electrical Stress;Coatings;2024-07-19

2. Optical, electrical, and mechanical reliability of 1700 PPI Micro-LED device;Microelectronics Reliability;2024-07

3. A Weibull–lognormal-based life prediction model for LED light with four groups of ADTs;Lighting Research & Technology;2024-06-24

4. Degradation of InGaN/GaN Quantum Well UV LEDs Caused by Short-Term Exposure to Current;Technical Physics;2023-11

5. Optically Induced Degradation Due to Thermally Activated Diffusion in GaN-Based InGaN/GaN MQW Solar Cells;IEEE Transactions on Electron Devices;2023-03