Affiliation:
1. Department of Electrical and Computer Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 08826, Korea
Abstract
We investigate the characteristics of short-term and long-term synaptic plasticity in a Si-based fieldeffect transistor (FET)-type memory device. An Al2O3/HfO2/Si3N4/SiO2 gate dielectric stack is used to realize short-term
and long-term plasticity (STP/LTP). Si3N4 and HfO2 layers are designed to charge trap layer for synaptic device. The mechanism of STP and LTP operation is analyzed by considering the device response to the potentiation and depression pulses and retention measurement
of the memory functionality. To investigate the STP operation, paired pulse facilitation (PPF) measurement is performed. The retention characteristic is also studied to validate the LTP property of the device. By investigating a device with an Al2O3/HfO2/Si3N4
stack as a control device, it is shown that the Al2O3/HfO2/Si3N4/SiO2 stack device is suitable for a synaptic device in neuromorphic systems.
Publisher
American Scientific Publishers
Subject
Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering
Cited by
4 articles.
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