Channel Conductance Modulation of Dual-Gate Charge-Trap Oxide Synapse TFT Using In-Ga-Zn-O Channel and ZnO Trap Layers-Reference-Cited by-同舟云学术

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Channel Conductance Modulation of Dual-Gate Charge-Trap Oxide Synapse TFT Using In-Ga-Zn-O Channel and ZnO Trap Layers

Published:2020-11 Issue:11 Volume:41 Page:1661-1664
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Ryoo Hyun-Joo^ORCID,Yoon Sung-Min^ORCID

Funder

Kyung Hee University-Samsung Electronics Research and Development Program entitled Flexible Flash Memory Device Technologies for Next-Gen Consumer Electronics

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9238530/09193999.pdf?arnumber=9193999

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. IGZO charge trap flash device for reconfigurable logic functions;Applied Physics Letters;2024-03-18

2. Assessment of trapping layer control in IGZO/Al2O3/Ga2O3 synaptic transistor for neuromorphic computing;Materials Today Physics;2023-09

3. Tailoring Neuroplasticity in a Ferroelectric‐Gated Multi‐Terminal Synaptic Transistor by Bi‐Directional Modulation for Improved Pattern Edge Recognition;Advanced Functional Materials;2023-08-31

4. Synaptic Transistor Based on In‐Ga‐Zn‐O Channel and Trap Layers with Highly Linear Conductance Modulation for Neuromorphic Computing;Advanced Electronic Materials;2023-04-14

5. Bio‐Inspired 3D Artificial Neuromorphic Circuits;Advanced Functional Materials;2022-02-26

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