Orientation-Dependent Dewetting of Patterned Thin Si Film on SiO2

Abstract

AbstractThe agglomeration of a Silicon On Insulator (001) film during a thermal annealing at 900°C and 950°C under hydrogenated atmosphere has been characterized by Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). At this temperature, the Si faceting along {110}, {111} and {113} planes is interpreted by a surface energy anisotropy. The anisotropy of the diffusion coefficient is also revealed by the formation of Si line along the <510>, <110> and <100> directions. A mechanism of the pearling instability of the <510> lines is proposed.