Chemical Vapor Deposition of Silicon Films Using Hexachlorodisilane

Abstract

ABSTRACTThe use of hexachlorodisilane (Si2Cl6) as an alternative to silane for growth of polycrystalline silicon films has been investigated. Films were grown at atmospheric pressure in both hydrogen and nitrogen carrier gases over a temperature range of 450–900°C. Deposition rate data indicate the existence of two growth regimes at high and low temperatures and in the presence or absence of hydrogen. The change from amorphous to polycrystalline growth takes place at 600–650°C. At 600°C deposited films are amorphous but crystallize during the growth process. The chlorine content of high-temperature films was found to be less than 0.01 at.%.