The adsorption and surface reaction of SiCl4 on Si(100)-(2 × 1)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference42 articles.
1. Growth and etching of silicon in chemical vapour deposition systems; The influence of thermal diffusion and temperature gradient
2. Chemical vapour deposition of Si3N4 from a gas mixture of Si2Cl6, NH3 and H2
3. Chemical Vapor Deposition of Silicon Films Using Hexachlorodisilane
4. LPCVD of Silicon Nitride Films From Hexachlorodisilane and Ammonia
5. Hexachlorodisilane as a Precursor in the LPCVD of Silicon Dioxide and Silicon Oxynitride Films
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1. Multiple Pathways for Dissociative Adsorption of SiCl4 on the Si(100)-c(4×2) Surface;Symmetry;2023-01-11
2. Low-energy ion irradiation effects on chlorine desorption in plasma-enhanced atomic layer deposition (PEALD) for silicon nitride;Japanese Journal of Applied Physics;2022-06-13
3. Surface kinetics and feature scale particle model of SixNy atomic layer deposition using Si2Cl6 precursor;Journal of Vacuum Science & Technology A;2020-09
4. Self-limiting CVD of a passivating SiO x control layer on InGaAs(001)-(2x4) with the prevention of III-V oxidation;Surface Science;2017-06
5. Passivation of InGaAs(001)-(2 × 4) by Self-Limiting Chemical Vapor Deposition of a Silicon Hydride Control Layer;Journal of the American Chemical Society;2015-06-23
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