Multiple Pathways for Dissociative Adsorption of SiCl4 on the Si(100)-c(4×2) Surface

Abstract

The adsorption of silicon tetrachloride (STC, SiCl4) on the silicon surface is a crucial process in polysilicon manufacture. However, the underlying mechanism for the adsorption remains highly uncertain. Here, new dissociative adsorption (DA) reaction pathways involving a flip of a silicon dimer in the first layer and considering physisorption are identified. Different DA patterns, inter-row (IR), inter-dimer (ID), and on-dimer (OD), are confirmed by the density functional theory (DFT) calculations at the PBE-D3(BJ)/TZVP-MOLOPT-GTH level. The stable structures for all minima are searched by global optimization through the artificial bee colony (ABC) algorithm. Findings reveal that the parent molecules dissociate first by breaking one Si-Cl bond, following which the resulting SiCl3 and Cl fragments are attached to adjacent Si-atom sites. Moreover, dimer flipping significantly reduces the energy barrier for chemisorption, mainly due to the change in electronic structure that enhances the interaction of the site with the SiCl3 radical. Physisorption may also be accompanied by dimer flipping to form a stable adsorption structure.