Molecular Dynamics Simulations of Low Energy Displacement Cascades in Silicon.-Reference-Cited by-同舟云学术

Molecular Dynamics Simulations of Low Energy Displacement Cascades in Silicon.

Published:1988 Issue: Volume:128 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Mazzone A. M.

Abstract

ABSTRACTDisplacement cascades formed in a silicon crystal by As+ and Si+ ions with energy in the range 50–500 eV are constructed with a molecular dynamics and a Monte Carlo simulation method. Conspicuous spike effects are observed with the molecular dynamics simulation.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference7 articles.

1. Properties of in and p subcascades in a crystalline ion-implanted InP target

2. Molecular dynamics simulation of the damage formed in silicon at energies near threshold

3. Disorder production and amorphisation in ion implanted silicon

4. Development of a many-body Tersoff-type potential for silicon

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