Properties of in and p subcascades in a crystalline ion-implanted InP target-Reference-Cited by-同舟云学术

Properties of in and p subcascades in a crystalline ion-implanted InP target

Published:1988-05 Issue:5 Volume:57 Page:741-747
ISSN:0141-8610
Container-title:Philosophical Magazine A
language:en
Short-container-title:Philosophical Magazine A

Author:

Mazzone A. M.

Publisher

Informa UK Limited

Subject

Metals and Alloys,Physics and Astronomy (miscellaneous),Condensed Matter Physics,General Materials Science,Electronic, Optical and Magnetic Materials

Link

http://www.tandfonline.com/doi/pdf/10.1080/01418618808209917

Reference11 articles.

1. Biersack, J. P. and Ziegler, J. F. 1982.Ion Implantation Techniques, Edited by: Ryssel, H. and Glaswshnig, H. Vol. 10, 122Berlin: Springer. Springer Series in Electrophysics

2. Stoichiometric disturbances in ion implanted compound semiconductors

3. Channeling in GaAs. A Monte Carlo Simulation of low Energy Implants

4. Hautala, M. 1985.Materials Research Society Symposia Proceedings, Edited by: Appleton, B. R. and Eisen, F. H. Vol. 45, 109–115. Pittsburgh, Pennsylvania: Materials Research Society.

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1. PLVVandLMMAuger emission induced byAr+impact on the InP(110) surface;Physical Review B;1997-12-15

2. Early stage in low energy ion-induced damage on InP(110) surface;Applied Surface Science;1997-12

3. Molecular dynamics simulations of disorder formed in silicon and germanium by low-energy ion irradiation;Philosophical Magazine Letters;1989-10

4. Charge States of Heavy Ions with Energy in the MeV Range in Crystalline Semiconductor Targets;MRS Proceedings;1989

5. Molecular Dynamics Simulations of Low Energy Displacement Cascades in Silicon.;MRS Proceedings;1988