Disorder production and amorphisation in ion implanted silicon

Author:

Thompson D. A.,Golanski A.,Haugen K. H.,Stevanovic D. V.,Carter G.,Christodoulides C. E.

Publisher

Informa UK Limited

Subject

General Engineering

Reference39 articles.

1. Mayer, J. W. 1971.Radiation Effects in Semiconductors, Edited by: Corbett, J. W. and Watkins, G. D. 367New York: Gordon and Breach Ltd.

2. Ion implantation in semiconductors—Part II: Damage production and annealing

3. Vook, F. L. 1973.Radiation Damage and Defects in Semiconductors, Inst. Phys. Conf. Series No. 16 Edited by: Whitehouse, J. E. 60London

4. Evidence for spike-effects in low-energy heavy-ion bombardment of Si and Ge

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