Molecular dynamics simulation of the damage formed in silicon at energies near threshold-Reference-Cited by-同舟云学术

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Molecular dynamics simulation of the damage formed in silicon at energies near threshold

Published:1988-06 Issue:1-4 Volume:33 Page:776-779
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Mazzone A.M.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference10 articles.

1. Interatomic Potentials;Torrens,1972

2. Effect of Invariance Requirements on the Elastic Strain Energy of Crystals with Application to the Diamond Structure

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Defect structure;Materials Science in Microelectronics I;2005

2. Anharmonic decay and the propagation of phonons in an isotopically pure crystal at low temperatures: Application to dark-matter detection;Physical Review B;1993-01-01

3. Computer Simulation of Atomic Collision Processes in Solids;MRS Proceedings;1992

4. Programs Based on the Classical Dynamics Model;Computer Simulation of Ion-Solid Interactions;1991

5. Radiation Damage;Computer Simulation of Ion-Solid Interactions;1991

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