Author:
Levi A. F. J.,Tung R. T.,Batstone J. L.,Anzlowar M.
Abstract
ABSTRACTWe have explored the possibility of fabricating a metal base transistor in the Si/CoSi2 material system. Utilizing recent advances in the growth of thin, pinhole free, CoSi2 layers on Si(111) we have measured the transistor characteristics of a Si/CoSi2/Si structure. The observed low common emitter current gain is attributed to an absence of current carrying states in the CoSi2 transistor base.
Publisher
Springer Science and Business Media LLC
Reference15 articles.
1. 14. Hunt B. D. (private communication).
2. Epitaxially grown base transistor for high-speed operation
3. 12. Tung R. T. and Batstone J. L. , this volume.
4. 15. Mattheiss L. F. and Hamann D. R. (private communication).
Cited by
6 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献