Electron transmission probability across CoSi2/n-Si(111) interfaces measured with a scanning tunneling microscope
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference28 articles.
1. Electron transmission throughNiSi2-Si interfaces
2. Hot Electron Transistors Using Si/CoSi2
3. Application of MBE-grown epitaxial Si/CoSi/sub 2//Si heterostructures for overgrown silicon permeable-base transistors
4. Control of a natural permeable CoSi2base transistor
5. Si/CoSi2/Si permeable base transistor obtained by silicon molecular beam epitaxy over a CoSi2 grating
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1. BEEM imaging and spectroscopy of buried structures in semiconductors;Physics Reports;2001-08
2. Ab initio study of theCoSi2(110) surface;Physical Review B;1997-04-15
3. ELECTRONIC TRANSPORT IN EPITAXIAL FILMS STUDIED BY SCANNING PROBE TECHNIQUES;Surface Review and Letters;1997-04
4. Site conversion path and the kinetics of Ti on Si(001)-2 × 1 observed by scanning tunneling microscopy;Surface Science;1996-04
5. Measurement of hot-electron scattering processes at Au/Si(100) Schottky interfaces by temperature-dependent ballistic-electron-emission microscopy;Physical Review B;1996-02-15
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